BIDIRECTIONAL SWITCH

摘要

A bidirectional switch formed in a substrate includes first and second main vertical thyristors in antiparallel connection. A third auxiliary vertical thyristor has a rear surface layer in common with the rear surface layer of the first thyristor. A peripheral region surrounds the thyristors and connects the rear surface layer to a layer of the same conductivity type of the third thyristor located on the other side of the substrate. A metallization connects the rear surfaces of the first and second thyristors. An insulating structure is located between the rear surface layer of the third thyristor and the metallization. The insulating structure extends under the periphery of the first thyristor. The insulating structure includes a region made of an insulating material and a complementary region made of a semiconductor material.

主权项

1. A bidirectional switch formed inside and on top of a semiconductor substrate of a first conductivity type having a front surface and a rear surface, comprising:
a first vertical thyristor having a rear surface layer of the second conductivity type; a second vertical thyristor having a rear surface layer of the first conductivity type; a third vertical thyristor having a rear surface layer of the second conductivity type in common with the rear surface layer of the first vertical thyristor; a peripheral region of the second conductivity type surrounding the first, second, and third vertical thyristors, in contact with the rear surface layer of the third vertical thyristor, and further electrically connected with an intermediate layer of the second conductivity type of the third vertical thyristor located on the other side of the substrate; a first metallization connecting the rear surfaces of the first and second vertical thyristors; and a structure having an insulation function, located between the rear surface layer of the third vertical thyristor and the first metallization, and extending under a portion of the periphery of the first vertical thyristor, said structure comprising a first region made of an insulating material coating the rear surface of the substrate, and a second region made of a semiconductor material of the first conductivity type occupying an area complementary to that occupied by the first region.