发明名称 |
Method for Plasma Etching of Positively Sloped Structures |
摘要 |
The present invention provides a method of etching features in a substrate. The method comprising the steps of placing the substrate on a substrate support in a vacuum chamber. An alternatingly and repeating process is performed on the substrate until a predetermined trench depth and a predetermined sidewall angle are achieved. One part of the process is a deposition step which is carried out by introducing at least one polymer containing gas into the vacuum chamber. A plasma is ignited from the polymer containing gas which is then used to deposit a polymer on the substrate. The other part of the alternatingly and repeating process is an etching step which is carried out by introducing an etchant containing gas, a polymer containing gas and a scavenger containing gas into the vacuum chamber. A plasma is ignited from the etchant containing gas, the polymer containing gas and the scavenger containing gas which is then used to etch the substrate.
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申请公布号 |
US2008061029(A1) |
申请公布日期 |
2008.03.13 |
申请号 |
US20070834127 |
申请日期 |
2007.08.06 |
申请人 |
LAI SHOULIANG;MACKENZIE KEN;JOHNSON DAVID |
发明人 |
LAI SHOULIANG;MACKENZIE KEN;JOHNSON DAVID |
分类号 |
B44C1/22 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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