METHOD FOR SOLIDIFICATION OF SEMI CONDUCTOR LAYER

摘要

A method for crystallizing a semiconductor layer is provided to suppress film penetration due to flow of a liquid semiconductor layer by blocking the flow of the liquid semiconductor layer molten by laser beam irradiation. A semiconductor layer is formed on a substrate(S10), and then a surface layer is formed on the semiconductor layer through a plasma enhanced chemical vapor deposition method using a source gas comprising at least one selected from a nitrogen gas, an oxygen gas, and a nitrous oxide gas(S20). The semiconductor layer and the surface layer are crystallized through lateral solidification having orientation(S30). The semiconductor layer is made of amorphous silicon, and the surface layer is made of any one selected from the group consisting of a silicon nitride layer, a silicon oxide layer and a silicon nitride oxide layer.