| 摘要 |
<p>An exposure mask and a method for manufacturing a semiconductor device using the same are provided to prevent the damage of semiconductor substrate at an edge part of active region so as to block an SAC(Self Align Contact) fail by forming a recess of an isolation layer at a position away from the edge part of active region. A photoresist layer is formed on an upper portion of a semiconductor substrate(100) having an isolation layer(110) and an active region(105). An exposure process and a development process are performed by using an exposing mask to form a photoresist pattern for defining a recess region. The semiconductor substrate is etched by using the photoresist pattern as a mask to form a recess. The recess is etched to form a bulb-type recess. A gate is formed on an upper portion of the bulb-type recess. The recess formed on the isolation layer is separated from an edge part of active region. A line width of the recess formed on the isolation layer is identical to that of the recess formed on the active region.</p> |
