| 摘要 |
A semiconductor device includes a unit high-breakdown-voltage transistor includes first to fourth high-breakdown-voltage transistors. The first high-breakdown-voltage transistor is connected to a first write line at the other end of the current path thereof, and includes a first gate which is disposed in a first direction. The second high-breakdown-voltage transistor is connected to a second write line at the other end of the current path thereof, and includes a second gate which is disposed in a second direction crossing the first direction. The third high-breakdown-voltage transistor is connected to a third write line at the other end of the current path thereof, and includes a third gate which is disposed in the first direction. The fourth high-breakdown-voltage transistor is connected to a fourth write line at the other end of the current path thereof, and includes a fourth gate which is disposed in the second direction.
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