| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the damage to a diffusion layer located below contact plugs provide by separating at least a part of a guard ring from a semiconductor substrate, thereby checking the deterioration of the data hold characteristics of a DRAM. <P>SOLUTION: The semiconductor device 1 comprises a circuit forming region D1 and a seal ring 30 (guard ring) surrounding this region D1 on which a DRAM 40 is formed. Layer insulation films 22, 24, 26, 28 are formed on the semiconductor substrate 10. The seal ring 30 is formed in the layer insulation films 22, 24, 26, 28, and at least a part thereof is distant from the semiconductor substrate 10. <P>COPYRIGHT: (C)2008,JPO&INPIT |
