发明名称 ERASE FUNCTION TESTING METHOD OF SEMICONDUCTOR NONVOLATILE MEMORY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an erase function testing method of a semiconductor nonvolatile memory executing the erase function test in sector units in a short time. <P>SOLUTION: The erase function testing method of the semiconductor nonvolatile memory includes: a step (SO1) for carrying out an erase operation by specifying whole sectors by a decoder and for successively outputting sector specification signals by sector from the decoder to test the semiconductor nonvolatile memory, of which the correct batch erasing operation of whole bits is confirmed; a step (SO2) for verifying whether the sector specification signals are correctly output; and a step (SO3) for discriminating that the erase operation in sector units is normally executed when the sector specification signals are all correctly output. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008052805(A) 申请公布日期 2008.03.06
申请号 JP20060227113 申请日期 2006.08.23
申请人 TOSHIBA CORP;TOSHIBA LSI SYSTEM SUPPORT KK 发明人 MAEDA HOKUTO;SAEKI YUKIHIRO;TOKUSHIGE KAORU;MARUYAMA KIMIO
分类号 G11C29/56;G01R31/28;G11C16/02 主分类号 G11C29/56
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