SIMULATION MODEL OF BT INSTABILITY OF TRANSISTOR, AND SIMULATION MODELING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a simulation model of BT (Bias Temperature) instability of a transistor with a proper evaluation level without leading to an excess in evaluation and quality. SOLUTION: In this simulation model of BT instability of a transistor, a bias condition of at least one terminal among the drain terminal, the source terminal and the substrate terminal of the transistor is set up as an independent bias condition from other terminals; and then a model parameter of the transistor is changed in the set bias condition. COPYRIGHT: (C)2008,JPO&INPIT