发明名称 |
METHOD OF GROWING SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING SILICON WAFER |
摘要 |
<p>In a method for growing a silicon single crystal, a silicon single crystal is grown by the Czochralski method to have an oxygen concentration of 12×10 17 to 18×10 17 atoms/cm 3 on ASTM-F 121 1979. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the single crystal. A temperature of the silicon single crystal is controlled during the growth of the crystal such that the ratio Gc/Ge of an axial thermal gradient Gc at the central portion of the crystal between its melting point and its temperature of 1350°C to an axial thermal gradient Ge at the periphery of the crystal between its melting point and its temperature of 1350°C is 1.1 to 1.4. The axial thermal gradient Gc at the central portion of the crystal is 3.0 to 3.5°C/mm.</p> |
申请公布号 |
EP1895027(A1) |
申请公布日期 |
2008.03.05 |
申请号 |
EP20050806144 |
申请日期 |
2005.11.08 |
申请人 |
SUMCO CORPORATION |
发明人 |
KOGURE, YASUHIRO;TAKASE, NOBUMITSU;INAMI, SHUICHI;NAKAMURA, TSUYOSHI;HAMADA, KEN |
分类号 |
C30B29/06;C30B15/20 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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