METHOD FOR GROWING GALLIUM NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for epitaxially growing gallium nitride crystals by forming a dotmask or a stripemask on the undersubstrate, where facets are formed starting from edges of the masks because growth is caused on exposed parts but suppressed on masks, and crystal defect accumulating regions H are formed on masked parts which are desirable to be inversion regions J composed of single crystals with inverted c-axis orientation, hence the inversion region J is necessarily caused to form on masks. SOLUTION: It is necessary for forming the inversion region J that polarity-inverted crystals with inverted orientation are generated on facets. Gallium nitride is grown in vapor phase so that facets are not buried by controlling growth temperature and growth rate each in an appropriate range. COPYRIGHT: (C)2008,JPO&INPIT