| 摘要 |
PROBLEM TO BE SOLVED: To obtain a tunnel-type magnetic detection element that increases a resistance change rate while reducing an increase in magnetostriction in a free magnetic layer. SOLUTION: A laminated body T1 constituting the tunnel-type magnetic detection element has a part where a fixed magnetic layer 4, an insulating barrier layer 5, and the free magnetic layer 8, are formed in that order from below. An enhancing layer 6 formed on the side of the insulating barrier layer 5 of the free magnetic layer 8 is made as a first enhancing layer 6a on the side of the insulating barrier layer 5 and a second enhancing layer 6b on the side of the soft-magnetic-layer 7. An Fe content in a CoFe alloy forming the first enhancing layer 6a is made larger than that of in a CoFe alloy of the second enhancing layer. By this, it is possible to increase the resistance change rate while suppressing the increase in magnetostriction in the free magnetic layer. COPYRIGHT: (C)2008,JPO&INPIT
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