| 摘要 |
PROBLEM TO BE SOLVED: To improve the performance of a semiconductor device. SOLUTION: In the semiconductor device, for example, a plate-form (or bar-form) Si post 11a is formed on the principal surface of an Si substrate 11 in its vertical direction. In order to improve the mobility of the carriers present in the Si post 11a, a stress applying layer 21 for giving to the Si post 11a an extending stress in the vertical direction orthogonal to the principal surface of the Si substrate 11 is disposed constitutionally on each side surface of the Si post 11a. COPYRIGHT: (C)2008,JPO&INPIT
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