| 摘要 |
The invention discloses a switching device for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A buffer layer is formed between the gate and the substrate, and/or formed between the gate and the gate insulating layer. The buffer layer comprises TaSi<SUB>x</SUB>, TaSi<SUB>x</SUB>N<SUB>y</SUB>, TiSi<SUB>x</SUB>, TiSi<SUB>x</SUB>N<SUB>y</SUB>, WSi<SUB>x</SUB>, WSi<SUB>x</SUB>N<SUB>y</SUB>, or WC<SUB>x</SUB>N<SUB>y</SUB>. A semiconductor layer is formed on the gate insulating layer. A source and a drain are formed on a portion of the semiconductor layer. The gate is covered by the buffer layer.
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