发明名称 Process to manufacture magnetic tunnel junction read head
摘要 Using a beam of xenon ions together with a suitable mask, a MTJ stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
申请公布号 US2008034576(A1) 申请公布日期 2008.02.14
申请号 US20070975266 申请日期 2007.10.18
申请人 HEADWAY TECHNOLOGIES, INC. AND TDK CORPORATION 发明人 KAO STUART;LUO CHUNPING;CHEN CHAOPENG;MACHITA TAKAHIKO;MIYAUCHI DAISUKE;CHANG JEIWEI
分类号 G11B5/127;G01R33/09;G11B5/33;G11B5/39;H01F10/32;H01F41/30 主分类号 G11B5/127
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