发明名称 TRANSREFLECTIVE THIN FILM TRANSISTER AND FABRICATING METHOD THEREOF
摘要 A transflective TFT substrate and a manufacturing method thereof are provided to remove an organic residual layer remaining on a drain electrode in forming a pixel electrode, thereby preventing a contact defect between the drain electrode and the pixel electrode. A method for manufacturing a transflective TFT(Thin Film Transistor) substrate comprises the following steps of: forming a TFT on a substrate(20); forming an uneven organic insulating layer(50) which has a first pixel contact hole(41a) for exposing the drain electrode(37) of the TFT through an imprint process on the substrate in which the TFT is formed; forming a pixel electrode(60) which has a second pixel contact hole(41b) connected to the first pixel contact hole for exposing the drain electrode of the TFT on the substrate in which the organic insulating layer is formed; and connecting the drain electrode and the pixel electrode through the first and second pixel contact holes and forming a reflective electrode(70) formed in a reflection region.
申请公布号 KR20080013287(A) 申请公布日期 2008.02.13
申请号 KR20060074604 申请日期 2006.08.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YANG, YOUNG CHOL
分类号 G02F1/136 主分类号 G02F1/136
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