| 摘要 |
A method of forming a semiconductor structure and the semiconductor structure. The method of manufacturing a structure includes applying a selective cap deposition to at least partially fill perforations, openings, or nano-holes formed above exposed portions of an interconnect during air-gap formation. The structure includes an insulator layer having the interconnect. Air-gaps are formed in the insulator layer. A selective cap deposition at least partially fills or plugs at least one perforations, openings, and nano-holes arranged above exposed portions of the interconnect during formation of the air-gaps.
|
