发明名称 POWER-FEEDING STRUCTURE OF PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a power-feeding structure of a plasma treatment apparatus, which controls the temperature rise of a feeder cable and can be easily connected to an electrode, even when the plasma CVD apparatus is such a large type as to form a film on a large area. SOLUTION: This plasma treatment apparatus has a high-frequency electrode 6 which is placed so as to oppose a substrate 8 in a vacuum vessel 2a, and an earth electrode 7; generates plasma by applying a voltage between the high-frequency electrode 6 and the earth electrode 7 by supplying a high-frequency power from a high-frequency power source 3 through the feeder cable 5, and feeding a gas at the same time; and treats the surface of the substrate 8 with the plasma. The feeder cable 5 of the plasma treatment apparatus is formed such that the cross section in the upstream side of being connected to the high-frequency power source 3 is larger than the cross section in the downstream side of being connected to the high-frequency electrode 6. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008019470(A) 申请公布日期 2008.01.31
申请号 JP20060191151 申请日期 2006.07.12
申请人 FUJI ELECTRIC HOLDINGS CO LTD 发明人 OUCHI TAKASHI;SHIMIZU HITOSHI;GEKITO MASAKAZU;SHIMOZAWA SHIN
分类号 C23C16/509;H01L21/31 主分类号 C23C16/509
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