| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to shallow an extension source/drain area to improve resistance characteristic, and to effectively apply the strain to a channel area. A semiconductor device includes a semiconductor substrate(10), a gate insulating film(11), a gate electrode(13'), a first spacer(20), a second spacer(50), an epitaxial pattern(30), an extension source/drain area(40), and a deep source/drain area(60'). The gate insulting film is formed on the semiconductor substrate. The gate electrode is formed on the gate insulting film, and has a poly-silicon gate film(13a) and an epitaxial gate film(13b). The first spacer is formed on the side of the gate electrode. The second spacer is formed on the side of the first spacer. The epitaxial pattern is formed between the second spacer and the substrate, and has an outer profile aligned with an outer profile of the second spacer. The extension source/drain area is aligned with the first spacer, and is formed in the substrate. The deep source/drain area is aligned with the second spacer, and is formed in the substrate.</p> |
