发明名称 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME
摘要 <p>A negative resist composition is provided to ensure higher resolution than the conventional hydroxystyrene-based, novolac-based resist materials and form a good pattern profile after exposure. A negative resist composition includes at least a polymer compound having a repeat unit of hydroxyvinylnaphthalene represented by the following formula 1, wherein R^1 represents a hydrogen atom or methyl group, m is 1 or 2, and a is in the range of 0<a<=1. The polymer compound has a mass average molecular weight of 1,000-500,000. A patterning method includes the steps of: coating a substrate with the negative resist composition; heating the coated substrate, and exposing the heated substrate to high energy rays; and developing the exposed substrate using a developer.</p>
申请公布号 KR20080009646(A) 申请公布日期 2008.01.29
申请号 KR20070073244 申请日期 2007.07.23
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HATAKEYAMA JUN;TAKEDA TAKANOBU
分类号 G03F7/004 主分类号 G03F7/004
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