| 摘要 |
A semiconductor process and apparatus provide a dual or hybrid substrate by forming a second semiconductor layer ( 214 ) that is isolated from, and crystallographically rotated with respect to, an underlying first semiconductor layer ( 212 ) by a buried insulator layer ( 213 ); forming an STI region ( 218 ) in the second semiconductor layer ( 214 ) and buried insulator layer ( 213 ); exposing the first semiconductor layer ( 212 ) in a first area ( 219 ) of a STI region ( 218 ); epitaxially growing a first epitaxial semiconductor layer ( 220 ) from the exposed first semiconductor layer ( 212 ); and selectively etching the first epitaxial semiconductor layer ( 220 ) and the second semiconductor layer ( 214 ) to form CMOS FinFET channel regions (e.g, 223 ) and planar channel regions (e.g., 224 ) from the first epitaxial semiconductor layer ( 220 ) and the second semiconductor layer ( 214 ).
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