发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To control progress of cleavage due to a heat load at the connector of an Al wire and an Al electrode within the apparatus. <P>SOLUTION: Progress of cleavage can be controlled because an angle formed by the Al wire and the Al electrode becomes an obtuse angle by making thick the Al electrode on a semiconductor chip, reducing the length and width thereof, and by completely covering the upper surface of the Al electrode with the Al wire at the time of conducting wire bonding with an ultrasonic wave apparatus. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008016576(A) 申请公布日期 2008.01.24
申请号 JP20060185077 申请日期 2006.07.05
申请人 HITACHI LTD 发明人 IWASA NAOKO;SASAKI KOJI
分类号 H01L21/60 主分类号 H01L21/60
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