| 摘要 |
<p>In a semiconductor device comprising patterns Pa1 through Pa3 which include (n+1) patterns (n is a natural number) for alignment arranged in a first direction which corresponds to a reading direction in pattern recognition, and patterns Pc1 formed in a mark proximity region Rc1, which include at least two patterns in at least the first direction, defining the pitches between the patterns Pa1 and Pa2 and between Pa2 and Pa3 as d1 and d2, respectively, defining the pitch between the patterns Pc1 in the first direction as dD, and defining the distance from the pattern Pa1 to the outside edge of the mark proximity region Rc1 as D, then, the dD is set so as to satisfy the relational expressions |(dD-d1)/d1|>=alpha and |(dD-d2)/d2|alpha(1>alpha>0) in the mark proximity region Rc1 in which at least D<=d1+d2 is satisfied.</p> |
