| 摘要 |
A method for preparing a tungstate single crystal which comprises growing a tungstate single crystal using, as a raw material, tungsten trioxide and a divalent metal oxide or carbonate, tungsten trioxide and a monovalent metal oxide or carbonate and a trivalent metal oxide, or a tungstate represented by the molecular formula: X<sb>II</sb>WO<sb>4</sb> or X<sb>I</sb>X<sb>III</sb>(WO<sb>4</sb>)<sb>2</sb>, wherein X<sb>I</sb>, X<sb>II </sb>and X<sb>III</sb> represent a monovalent metal element, a divalent metal element and a trivalent metal element, respectively, which is formed through heating above oxides and/or carbonates, and then heating the grown tungstate single crystal at 600°C to 1550°C in an atmosphere having a partial pressure of oxygen adjusted to a pressure less than that in the air. The above method allows the preparation of a tungstate single crystal having an enhanced density and exhibiting an increased quantity of light, which is useful as a scintillator for detecting a radiation such as X−ray or ϝ−ray, and a tungstate single crystal exhibiting an improved heat conductivity, which is useful as a laser host of a two wave laser device. |
