| 摘要 |
<p>An apparatus and a method for processing a substrate are provided to improve ashing uniformity by uniformly making plasma density formed on the substrate. A process chamber(110) provides process space where a substrate treatment process is performed. The process chamber has a substrate entrance and a gate valve for opening and blocking the substrate entrance at a side thereof. A substrate supporting member(120) is installed in the process chamber. The substrate transferred through the substrate entrance is placed on the substrate supporting member. Gas distribution plates(170a,170b) are formed on an upper side of the process chamber to distribute plasma and process gas to the process space. The gas distribution plate includes plural gas spraying channels(172a) having asymmetric shapes. The process chamber includes an exhaust pipe(116) formed on a bottom thereof.</p> |
