发明名称 Program Control Circuit of Flash Memory Device Having MLC and Method Thereof
摘要 A program control circuit and method thereof selectively controls a supply time of a word line bias voltage depending on the number of program cycles being in progress. Therefore, over-programming of MLCs can be prevented and an overall program time can be shortened.
申请公布号 US2008013372(A1) 申请公布日期 2008.01.17
申请号 US20070776844 申请日期 2007.07.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE HEE Y.;CHANG HEE H.
分类号 G11C16/04 主分类号 G11C16/04
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