<p>Provided is an accumulation type transistor having an impurity concentration of a semiconductor layer in a channel region at a value higher than 2OE0<SUP>17</SUP>cm<SUP>-3</SUP> to have a large gatevoltage swing.</p>
申请公布号
WO2008007749(A1)
申请公布日期
2008.01.17
申请号
WO2007JP63927
申请日期
2007.07.12
申请人
NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY;FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE;OHMI, TADAHIRO;TERAMOTO, AKINOBU;KURODA, RIHITO
