| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology to achieve both a high capacity density and a high capacity accuracy, to prevent a decline in withstand voltage, and to reduce an increase in leakage current in MIM capacitor which uses a high dielectric constant insulation film such as a hafnium oxide film. SOLUTION: The MIM capacitor comprises a first metal interconnection 700, a processed capacitive film 405, a processed top electrode 215, and a third metal interconnection 702. After an interlayer insulation film formed of silicon oxide is so formed as to cover the first metal interconnection, a first opening is formed in a region of the interlayer insulation film corresponding to a connection hole layer immediately above the first metal interconnection so as not to expose the top face of the first metal interconnection. Then, after a second opening is formed inside the first opening as to expose the surface of the first metal interconnection, the capacitive film and the third metal interconnection are formed. COPYRIGHT: (C)2008,JPO&INPIT |
