| 摘要 |
A fabrication method for a non-volatile memory is provided. To fabricate the non-volatile memory, a plurality of first trenches and second trenches are formed in a substrate, wherein the second trenches are disposed above the first trenches and cross over the first trenches. Then, a tunneling layer and a charge storage layer are sequentially formed on both sidewalls of each second trench. An isolation layer is filled into the first trench. Furthermore, a charge barrier layer is formed on the sidewall of the second trench, and a gate dielectric layer is formed at the bottom of the second trench. A control gate layer is filled into the second trench. Finally, two first doping regions are formed in the substrate at both sides of the control gate layer.
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