| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can improve the light emitting output emitted from its active layer and can be manufactured with a good yield. <P>SOLUTION: The semiconductor light emitting element comprises first, second, and third regions present on a substrate. The first region has n-type and p-type semiconductor layers and a p-side electrode connected with at least a portion of the p-type semiconductor layer. The second region has the n-type semiconductor layer and an n-side electrode connected with at least a portion of the n-type semiconductor layer. The third region has the substrates exposed to the external, and has a plurality of protrusions made of a semiconductor. <P>COPYRIGHT: (C)2008,JPO&INPIT |
