发明名称 SYSTEM FOR MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL USING THE SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a system for manufacturing a silicon single crystal securely preparing a silicon single crystal having a desired crystal quality and improving productivity and a yield and a method for manufacturing a silicon single crystal using the system. SOLUTION: The system 38 for manufacturing a silicon single crystal is a system for designing manufacturing conditions to control an F/G value within a specified range in order to control the crystal quality of a silicon single crystal manufactured by a pulling apparatus 30 using a CZ method to be within a target standard, and equipped with at least a means 1 for automatically designing tentatively manufacturing conditions of a silicon single crystal of the next batch from the result of crystal quality of a silicon single crystal of the previous batch, a means 2 for calculating a compensation amount from a varied amount of F and/or G which is a parameter of a structural member of a pulling apparatus 30 of the next batch, a means 3 for calculating a compensation amount from a varied amount of F and/or G which is a parameter of a manufacturing process at the next batch, and a means 4 for calculating manufacturing conditions at the next batch by adding the compensation amounts obtained by the means 2 and/or means 3 to the manufacturing conditions obtained by the means 1. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008001583(A) 申请公布日期 2008.01.10
申请号 JP20060175435 申请日期 2006.06.26
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 IIDA MAKOTO;MITAMURA NOBUAKI;YANAGIMACHI TAKAHIRO
分类号 C30B29/06;C30B15/22 主分类号 C30B29/06
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