| 摘要 |
The object of this invention is to provide a winding type plasma CVD apparatus in which quality of a layer can be made uniform by supplying a reaction gas uniformly to a deposition area of a film, and can perform a self-cleaning process of a deposition portion in the path of deposition onto the film. A film ( 22 ) is supported between a pair of movable rollers ( 33, 34 ) arranged on the upstream side and downstream side of the deposition portion ( 25 ) with regard to the traveling direction of the film, and then the film ( 22 ) is made to travel substantially linearly at the deposition position. Consequently, the distance between a shower plate ( 37 ) and the film ( 22 ) is kept constant, and the quality of the layer is made homogeneous. The film is heated by means of a metal belt ( 40 ) traveling simultaneously on the back side of the film. The moveable rollers ( 33,34 ) ascend from the deposition position to the self-cleaning position, and the film ( 22 ) can be separated from the shower plate ( 37 ). Self-cleaning can be carried out in the path of the deposition onto the film by closing the aperture of a mask ( 51 ) with a shutter ( 65 ), thereby preventing leakage of cleaning gas.
|
