| 摘要 |
FIELD: power semiconductor engineering. ^ SUBSTANCE: proposed semiconductor module has base member, insulating member coated with metal on both sides and disposed by means of one of both metal-coated surfaces on base member, as well as at least one semiconductor member disposed on other metal-coated surface. Disposed on extreme section of insulating member is insulating layer whose surface and second metal-coated surface form common flat surface. Method is also proposed for manufacturing such semiconductor module. ^ EFFECT: enhanced dielectric strength and facilitated manufacture of proposed semiconductor module. ^ 10 cl, 5 dwg |
