| 摘要 |
A thin film transistor TFT comprises a substrate 400, a gate insulating layer 410, a double gate structure 420, a first lightly doped region 420 and a second lightly doped region 440. In one embodiment, a heavily doped region 406 is disposed between the source 402 and drain 404 and a first channel 407 is disposed between the source 402 and the heavily doped region 406 and a second channel 408 is disposed between the drain 404. First gate 422 and second gate 424 are disposed above the first and second channels 407, 408 respectively. The TFT is characterised by the length L3 of the second lightly doped region 440 which is longer than the first lightly doped region 420. In another embodiment, a metal layer (540 fig 6d) is disposed over the double gate structure to reduce photo-leakage current. The TFT suppresses leakage current. |
