| 摘要 |
A semiconductor device in which an interlayer insulating film (27) is formed between a lower electrode (39) (or a barrier conductive film) and a conductive plug (22) in order to remove the impact of orientation/level difference on the surface of the conductive plug (22) onto a ferroelectric film (40) when a stack capacitor structure is employed for a ferroelectric capacitor structure (30). On contrary to the lower electrode (39) or a conductive film such as the barrier conductive film, surface of the interlayer insulating film (27) is flattened so that orientation/level difference of an underlying layer is not succeeded.
|
