| 摘要 |
A semiconductor device that suppresses partial discharging to a semiconductor substrate caused by local concentration of current. The semiconductor device includes a semiconductor substrate, a gate electrode buried in the semiconductor substrate, a conductor buried in the semiconductor substrate further inward from the gate electrode, a wiring layer formed in the semiconductor substrate in connection with the conductor, and an insulation film arranged between the gate electrode and the conductor. The conductor is higher than the surface of the semiconductor substrate.
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