| 摘要 |
An internal voltage generator is provided to prevent the increase of a leakage current as assuring margin for tWR(Write recovery time) fail of a memory cell, by obtaining temperature dependence of a back bias voltage. A reference voltage generation unit(100) generates a negative reference voltage in correspondence to temperature increase. An internal voltage detection unit detects a potential level of an internal voltage, and drives a pumping control signal according to the detection result, and the pumping control signal has the same temperature characteristics as the reference voltage. The internal voltage detection unit includes a potential level detection unit, a comparison unit and a driving unit. The comparison unit changes the potential level of a comparison voltage by comparing the detection voltage with the potential level of the reference voltage. The driving unit drives the pumping control signal in response to the potential level of the comparison voltage.
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