| 摘要 |
A semiconductor memory device and a method for measuring a bit line sense amplifier offset voltage thereof are provided to measure an offset voltage of a bit line sense amplifier independent of the characteristics of a cell transistor by measuring the offset voltage by changing the voltage level of only one of a bit line and a bit line bar. A number of mats(10,20,30) include a number of memory cells selected by a number of word lines and a number of bit lines. A precharge part(60,70) is controlled by an equalization signal, and precharges a bit line of a selected mat with a first bit line precharge voltage and precharges a bit line par of the other mat with a second bit line precharge voltage in a test mode. A sense amplifier part(40,50) is connected among the mats, and senses and amplifies a voltage difference between the bit line of the selected mat and the bit line bar of the other mat. A decoder part(80) disables the word lines of the selected mat by being controlled by a control signal applied in the test mode.
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