发明名称 |
Semiconductor memory device and method for arranging and manufacturing the same |
摘要 |
A semiconductor device and method for arranging and manufacturing the same are disclosed. The semiconductor device includes a plurality of inverters including at least one first pull-up transistor and first pull-down transistor and inverting and outputting an input signal, respectively; and a plurality of NAND gates including at least two second pull-up transistor and second pull-down transistor and generating an output signal having a high level if at least one of at least two input signals has a low level, respectively, wherein the at least one first pull-up transistor and first pull-down transistor and the at least two second pull-up transistor and second pull-down transistor are stacked and arranged on at least two layers.
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申请公布号 |
US7315466(B2) |
申请公布日期 |
2008.01.01 |
申请号 |
US20050191496 |
申请日期 |
2005.07.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAN GONG-HEUM;NAM HYOU-YOUN;LIM BO-TAK;PARK HAN-BYUNG;JUNG SOON-MOON;LIM HOON |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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地址 |
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