| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of heating a silicon carbide semiconductor substrate etc. which can uniformly heat a silicon carbide semiconductor substrate in a short time by using heat generated from a susceptor. SOLUTION: In the method of heating a silicon carbide semiconductor substrate, the silicon carbide semiconductor substrate 1 is heated in a state where a plurality of carbon particles 2 are put on the silicon carbide semiconductor substrate 1. In this case, the silicon carbide semiconductor substrate 1 is placed on the susceptor 13. Further, the heating processing of the silicon carbide semiconductor substrate 1 is executed by heating the susceptor 13. COPYRIGHT: (C)2008,JPO&INPIT
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