Junction leakage reduction in SiGe process by tilt implantation

摘要

A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate; forming a gate electrode on the gate dielectric; forming a stressor in the semiconductor substrate adjacent to an edge of the gate electrode; and tilt implanting an impurity after the step of forming the stressor. The impurity is preferably selected from the group consisting essentially of group IV elements, inert elements, and combinations thereof.