| 摘要 |
A method for detecting a mechanical defect of an ingot member made of a semiconductor material is provided to initially isolate a semiconductor wafer with a cavity by enabling a precise detection while shortening an interval of measurement time per sample. At least one ultrasonic head(2) generates at least one ultrasonic pulse, coupled to the plane(6) of an ingot member(1) by using a liquid coupling medium(3) as an intermediation and confronting the plane of the ingot member at each measurement point. The ultrasonic head scans the plane of the ingot member. The echo of ultrasonic pulse coming out from the ingot member is recorded as a function of time. An echo from the plane, an echo from an opposite plane(7) of the ingot member to the plane(6) and an additional echo, if possible, are detected to measure the position of a mechanical defect of the ingot member from the additional ingot. The ingot member can be made of a single crystalline semiconductor material.
|
