Operating method of non-volatile memory device

摘要

An operating method of non-volatile memory device is provided. The device includes memory cells having a semiconductor substrate (101), a stack layer, and source and drain regions (102,104) disposed below a surface of the substrate and separated by a channel region (106). The stack layer includes an insulating layer (140) disposed on the channel region, a charge storage layer (150) disposed on the insulating layer, a multi-layer tunneling dielectric structure (160) on the charge storage layer, and a gate (170) disposed on the multi-layer tunneling dielectric structure. A negative bias is supplied to the gate to inject electrons into the charge storage layer through the multi-layer tunneling dielectric structure by electron Fowler Nordheim (-FN) tunneling so that the threshold voltage of the device is increased. A positive bias is supplied to the gate to inject holes into the charge storage layer through the multi-layer tunneling dielectric structure by hole (+FN) tunneling so that the threshold voltage of the device is decreased.