FILTER HAVING INTEGRATED FLOATING CAPACITOR AND TRANSIENT VOLTAGE SUPPRESSION STRUCTURE AND METHOD OF MANUFACTURE

摘要

A filter having an incorporated floating capacitor and a transient voltage suppression structure is provided to incorporate a passive element in a transient voltage suppression device by including a filter structure in which a first floating capacitor device and a first transient voltage suppression device share a doped region of a second conductivity type formed in a semiconductor substrate of a first conductivity type. A semiconductor substrate of a first conductivity type has a first main surface. A first floating capacitor device is formed near to the first main surface. A first transient voltage suppression device(337) is formed near to the first main surface. A first floating capacitor device and a first transient voltage suppression device share a doped region of a second conductivity type formed in the semiconductor substrate. A first multilayered inductor overlays at least a part of the semiconductor substrate, including first and second terminals. The first multilayered inductor includes a first conductor overlaying the part of the semiconductor substrate, a second conductor overlaying at least a part of the first conductor, and a first dielectric disposed between the first and second conductors.