| 摘要 |
PROBLEM TO BE SOLVED: To provide a process of producing and a method of fabricating high productivity TFTs having different LDD structures at the same time on an identical substrate, and also to provide novel structures of the process and the method. SOLUTION: The process is implemented by employing a highly heat-resisting Ta film or Ta-based film for a wiring material, and in addition by covering with a protection layer to enable heat-treating at a high temperature (400 to 700°C). Using the protection layer as an etching stopper, the process includes, in producing a peripheral driving circuit structure, arranging TFTs having an LDD structure through self-alignment process using sidewalls 126, while, in producing a pixel matrix, arranging TFTs having an LDD structure through non-self-alignment process using insulators 125. COPYRIGHT: (C)2008,JPO&INPIT
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