发明名称 |
Dünnfilmresonator und Verfahren zum Herstellen desselben |
摘要 |
A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film. |
申请公布号 |
DE60036988(D1) |
申请公布日期 |
2007.12.20 |
申请号 |
DE2000636988 |
申请日期 |
2000.07.17 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
MANFRA, MICHAEL JAMES;PFEIFFER, LOREN NEIL;WEST, KENNETH WILLIAM;WONG, YIU-HUEN |
分类号 |
C23C14/06;H03H9/17;C23C16/34;H01L41/08;H01L41/22;H03H3/02;H03H9/15 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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