| 摘要 |
The present invention realizes high density mounting along with achieving power source sharing by a digital semiconductor element and an analog semiconductor element in a semiconductor device. An power layer for analog is connected to one end of an EBG layer, a power layer for digital is connected to the other end of the EBG layer, ground terminals for the respective elements are connected to a common ground layer, and a ground layer for separating the power layer for analog and the EBG layer from each other is disposed between the power layer for analog and the EBG layer. Thereby, high density mounting is achieved along with reducing interference of power source to an analog chip.
|
