| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor-on-insulator wafer capable of effectively preventing degradation of a semiconductor/insulator interface, especially degradation in electrical quality of the interface, by providing a diffusion barrier layer, especially an oxygen diffusion barrier layer, on one main surface of a source substrate. <P>SOLUTION: The method includes a step in which a semiconductor substrate or a substrate comprising an epitaxial semiconductor layer is provided as a source substrate 1, a step in which the source substrate 1 is made to fit to a handle substrate 5 to form a source handle compound 19, and a step in which the source substrate 1 is separated from the source handle compound 19 by a specified dividing region which is provided inside the source substrate 1 and is almost parallel to a main surface to form a semiconductor-on-insulator type wafer. For improved electrical characteristics, a diffusion barrier layer, especially an oxygen diffusion barrier layer, is provided on the source substrate 1. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
