A SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME AND DESIGNING THE SAME

摘要

A semiconductor device and a manufacturing method thereof and a design method are provided to decrease a time for forming a mask by occupying a relatively wide area of dummy areas with a relatively large dummy pattern to restrict increase in an amount of coordinate data. An isolation layer is formed on a semiconductor substrate to define a device formation region(DA). A semiconductor device is formed on the isolation layer. An interlayer dielectric having a plurality of wiring fills the semiconductor device. The isolation layer is a region in which an insulating layer is buried in a groove within the substrate. The device formation region comprises an active region and a dummy region(FA). The dummy region comprises a plurality of first dummy patterns(DP1) and a plurality of second dummy patterns(DP2).