发明名称 |
DUAL POLY DEPOSITION AND THROUGH GATE OXIDE IMPLANTS |
摘要 |
<p>Dopants are implanted at relatively high energies into an unmasked first region of a semiconductor substrate (200) through a thin layer of gate electrode material (202) and a gate dielectric layer. Lower energy dopants are then implanted into the thin layer of gate electrode material. The first region is then masked off, and the process is repeated in a previously masked, but now unmasked (210), second region of the semiconductor substrate. A second (and usually thicker) layer of gate electrode material is then formed over the thin layer of gate electrode material. The layer of thick gate electrode material, the layer of thin gate electrode material and the layer of gate dielectric material are patterned to form one or more gate structures over the doped regions of the substrate. Source and drain regions are formed in the substrate regions adjacent to the gate structures to establish one or more MOS transistors.</p> |
申请公布号 |
WO2007140360(A1) |
申请公布日期 |
2007.12.06 |
申请号 |
WO2007US69860 |
申请日期 |
2007.05.29 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED;YU, SHAOFENG;YANG, SHYH-HORNG |
发明人 |
YU, SHAOFENG;YANG, SHYH-HORNG |
分类号 |
H01L21/8238;H01L29/00 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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