| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which of uniformly forms a parting plane with a flat surface and produces fewer poor conduction electrodes and resin liftings when dividing a substrate of the semiconductor device including gallium. SOLUTION: A method of manufacturing a semiconductor device comprises processes of: forming a groove by radiating a laser beam 6 to make a boundary of each substrate on a substrate 1, on which an n-type semiconductor layer 2 and p-type semiconductor layer 3 are formed using gallium; immersing the substrate 1 into an acid liquid (hydrochloric acid) 7; and taking the substrate 1 out of the hydrochloric acid 7 to divide into each substrate from the boundary where the groove is formed. COPYRIGHT: (C)2008,JPO&INPIT |
